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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6277 DESCRIPTION *High Switching Speed *High DC Current Gain: hFE= 30-120@ IC= 20A *Low Collector Saturation Voltage: VCE(sat)=1.0V(Min.)@ IC= 20A *Complement to Type 2N6379 APPLICATIONS *Designed for use in industrial-military power amplifier and switching circuit applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak ww w scs .i VALUE 180 150 6 50 100 20 250 200 -65~200 UNIT V .cn mi e V V A A A W Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 0.7 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat)-1 VBE(sat)-2 VBE(on) ICEO ICEX IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain Current-Gain--Bandwidth Product Output Capacitance CONDITIONS IC= 50mA; IB= 0 IC= 20A; IB= 2A IC= 50A; IB= 10A IC= 20A; IB= 2A IC= 50A; IB= 10A IC= 20A; VCE= 4V VCE= 75V; IB= 0 B 2N6277 MIN 150 MAX UNIT V 1.0 3.0 1.8 3.5 V V V V V A A mA mA w w w. VCE= 180V; VBE(off)=1.5V VCE= 180V; VBE(off)=1.5V; TC=150 VEB= 6V; IC= 0 IC= 1A; VCE= 4V sem isc .cn i 50 30 10 30 1.8 50 10 1.0 0.1 IC= 20A; VCE= 4V IC= 50A; VCE= 4V 120 IC= 1A; VCE= 10V IE= 0; VCB= 10V; ftest= 0.1MHz MHz 600 pF Switching times tr ts tf Rise Time Storage Time VCC= 80V, IC= 20A, IB1= -IB2= 2A Fall Time 0.25 s VCC= 80V, IC= 20A, IB1= 2A, VBE(off)= 5V 0.35 0.80 s s isc Websitewww.iscsemi.cn 2 |
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